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Samsung Starts Mass Production of 9th Generation V-NAND: 1Tb 3D TLC NAND

Samsung Starts Mass Production of 9th Generation V-NAND: 1Tb 3D TLC NAND

Samsung Electronics has started mass production of its 9th generation V-NAND memory. The first dies based on their latest NAND tech come in 1 Tb capacity using Triple Level Cell (TLC) architecture, with data transfer rates of up to 3.2 GT/s. The new 3D TLC NAND memory will initially be used to make high-capacity and high-performance SSDs, which will help solidify Samsung's position in the storage market.

Samsung is conspicuously avoiding listing the number of layers in its latest generation of NAND, which is the main driving factor in increasing capacity from generation to generation. The company's current 8th-gen V-NAND consists of 236 layers – the same as its larger rivals – and word on the street is that the 9th-gen V-NAND has been boosted to 290 layers, though that's yet to be confirmed. Is.

Regardless, Samsung says its 9th-generation V-NAND memory boasts about a 50% improvement in bit density over its 8th-generation predecessor. Touting this benefit, the company cited the miniaturization of cell size as well as the integration of improved memory cell technologies that reduce cell interference and extend cell lifespan. With its latest NAND technology, Samsung has also been able to eliminate dummy channel holes, thereby reducing the planar area of ​​memory cells.

Interestingly, today's announcement also marks the first time that Samsung has publicly confirmed the use of string stacking in its NAND, referring to it as their “double-stack structure.” . It is widely believed that the company is also using sting stacking back in its 8th generation NAND, however this has never been confirmed by the company. Regardless, the use of string stacking is only going to grow from here, as vendors look to add layers to their NAND dies, while manufacturing variability and channel hole tolerances make it difficult to produce more than 150-200 layers in a single stack. give













Samsung TLC V-NAND flash memory
9th Gen V-NAND 8th Gen V-NAND
Layers 290? 236
Dex 2 (x145) 2 (x118)
The ability to die 1 Tbt 1 Tbt
Die size (mm2) ?mm2 ?mm2
Density (Gbit/mm2) ? ?
I/O speed 3.2 GT/s
(Toggle 5.1)
2.4 GT/s
(Toggle 5.0)
Airplane 6? 4
CuA / PuC Yes Yes

Speaking of channel holes, another significant technological addition to the 9th generation V-NAND is Samsung's innovative 'channel hole etching' technology. This process improves manufacturing productivity by enabling the simultaneous creation of electron paths within the double-stack structure. This method is important because it enables efficient drilling through more layers, which becomes increasingly important as cell layers are added.

The latest V-NAND also includes the introduction of a faster NAND flash interface, Toggle DDR 5.1, which increases data transfer rates by 33% to 3.2 GT/s, or about 400MB/sec, for a single die. . Additionally, according to Samsung, the power consumption of the 9th generation V-NAND has been reduced by 10 percent. Although Samsung doesn't say under what conditions – presumably, it's at the ISO frequency rather than the maximum frequency.

Samsung's 1Tb TLC V-NAND will be launched later this year following the launch of the Quad Level Cell (QLC) model.

“We are excited to deliver the industry's first 9th generation V-NAND that will drive future applications,” said Sung Hoi Hur, Head of Flash Product and Technology, Memory Business at Samsung Electronics. “To meet the evolving needs for NAND flash solutions, Samsung has pushed the boundaries of cell architecture and operational scheme for our next-generation product. With our latest V-NAND, Samsung's high-performance will continue to set the trend for the high-density solid-state drive (SSD) market that meets the needs of the next generation of AI.”

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