Samsung HBM4 Memory In Development For 2025 Debut: 16-Hi Stacks & 3D Packaging

Samsung HBM4 Memory In Development For 2025 Debut: 16-Hi Stacks & 3D Packaging

Samsung has it. announced Its next generation HBM4 memory development which will debut in 2025 with some amazing features and specifications.

Samsung's next-gen HBM4 memory should use increased capacities, increased speed and 3D packaging technology.

In a blog post from the Korean semiconductor manufacturer, Samsung once again confirmed that its HBM4 memory is currently in development and Should debut in 2025.. The company's current HBM portfolio includes the HBM3E “Shinebolt” as the top offering, Up to 36 GB capacity and up to 9.8 Gbps transfer speed using 24 Gb DRAM. The memory technology supports stacks of up to 12 Hi and uses 2.5D packaging.

The next evolution of Samsung's HBM portfolio will come in the form of HBM 4. The code name for this particular memory offering is currently unknown but it should take things even further. Starting with the specifications, Samsung's HBM4 memory is expected to include up to a 16-Hi stack, and if we use the same 24 Gb module, we'll see HBM4 at extremely high speeds compared to the current peak around. Can get a capacity of up to 256 GB. 10 Gbps.

First, there is 'segmentation'. In the early market, hardware flexibility was key, but in the future, as services mature around killer apps, the hardware infrastructure will inevitably undergo a process of optimization for each service. Samsung Electronics plans to respond by consolidating core die and diversifying packages and base dies such as 8H, 12H, and 16H.

Samsung Korea (machine translated)

Currently, NVIDIA's Blackwell B100/B200 And AMD's Instinct MI300 GPUs Offers HBM capacities up to 192 GB. The former uses the latest HBM3E standard while the latter uses the HBM3 DRAM solution. Both GPUs have 8 HBM sites, each with 12-Hi stacks, so if you just upgrade them to the new 16-Hi stacks, you get capacities up to 256 GB. This is not even taking into account the denser DRAM modules (24 Gb+) that will be available with HBM4.

If the first innovation to solve the powerwall started with the introduction of a base die using the logic process starting with the next-generation HBM4, the second innovation will occur as it gradually transitions from the current 2.5D to 3D HBM. Prepares. A third innovation is expected to come when DRAM cells and logic are ready to be more hybrid like HBM-PIM. We are currently in discussions with customers and partners to realize these innovations, and we will actively plan and prepare to open the market.

Samsung Korea (machine translated)

Additionally, another key technology behind HBM4 will be the use of 3D packaging. JEDEC recently mentioned relaxing the HBM4 memory requirements.Allows companies to use existing bonding tech. Next-generation 3D packaging may also overcome some of the cost concerns associated with hybrid bonding. AMD is expected to refresh its MI300 lineup with the MI350 and MI370 series. Which is expected to add increased capabilities while NVIDIA may refresh its Blackwell GPUs in the future when the supply of HBM4 stabilizes for faster variants.

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